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ACPL-796J-560E 线性、光伏输出光耦

The ACPL-796J is a 1-bit, second-order sigma-delta ((cid:2)(cid:3)(cid:4)) modulator converts an analog input signal into a highspeed data stream with galvanic isolation based on optical power supply
正向电流 IF 1. Data changes at the clock隔离电压 VISO 25电源电压 VCC 6.0工作温度 TA 40 to 105

品牌说明

本型号为 AVAGO(安华高) 产品。安华高与博通(Broadcom)属于同一家公司:安华高 2005 年由安捷伦分拆上市,2016 年被博通收购,成为博通旗下半导体业务,业内常以 AVAGO/安华高/博通 混称。本页参数与规格书均取自该产品线原厂资料。

产品实拍图

本型号暂无已核对的专属实拍图。为避免图文不符,本页不放同系列近似图;如需实物照片,请联系销售获取本批次实拍。

产品应用与封装尺寸

图纸取自原厂规格书,点击可放大查看原始尺寸标注。

引脚定义与内部结构

引脚符号名称
5V
6V
7V
10NC
11MDAT
12NC
13MCLKIN
14V
15NC
数据来源:原厂规格书引脚图

关键参数速览

正向电流 IF
1. Data changes at the clock
隔离电压 VISO
25
电源电压 VCC
6.0
工作温度 TA
40 to 105

产品特点 Features

  • 5 MHz to 20 MHz external clock input range
  • 1-bit, second-order sigma-delta modulator
  • 16 bits resolution no missing codes (12 bits ENOB)
  • 74 dB minimum SNR
  • 3.5 V/°C maximum offset drift
  • ±1% maximum gain error sion modes (combinations of speed and resolution), three different pre-trigger modes (allows conversion time
  • <1 s), offset calibration, fast over-range (over-current, or short circuits) detection, and adjustable threshold modulator without additional hardware. Refer to the
  • HCPL-0872 data sheet for details.
  • Notes:
  • SPI and QSPI are trademarks of Motorola Corp.
  • Shunt Resistors
  • The current-sensing shunt resistor should have low re- sistance (to minimize power dissipation), low inductance
  • Smaller shunt resistances decrease power dissipation, while larger shunt resistances can improve circuit accuracy by utilizing the full input range of the isolated modulator.
  • The first step in selecting a shunt is determining how much current the shunt will be sensing. The graph in
  • REWOPESROH
  • 35 380

绝对最大额定值 Absolute Maximum Ratings(TA = 25°C)

超过下表数值可能造成器件永久损坏,设计时请留余量。

参数符号最小最大单位
Storage TemperatureT–55+125°C
Ambient Operating TemperatureT–40+105°C
Supply voltageV , V DD1 DD2–0.56.0V
Steady-State Input Voltage[1,3]V +, V – IN IN–2V + 0.5 DD1V
Two-Second Transient InputVoltage[2] V +, V – IN IN–6V + 0.5 DD1V
Digital Input/Output VoltagesMCLKIN, MDAT–0.5V + 0.5 DD2V
Lead Solder Temperature260°C for 10 sec.,1.6 mm belowseating plane
数据来源:原厂规格书

安全与绝缘额定值(DIN EN/IEC 60747−5−5)

说明符号值单位
Installation classification per DIN VDE 0110/1.89,Table 1
for rated mains voltage ≤ 150 VrmsI-IV
for rated mains voltage ≤ 300 VrmsI-IV
for rated mains voltage ≤ 450 V rmsI-IV
for rated mains voltage ≤ 600 VrmsI-IV
for rated mains voltage ≤ 1000 VrmsI-III
Pollution Degree (DIN VDE 0110/1.89)2
Input to Output Test Voltage, Method bV2306Vpeak
V × 1.875 = V , 100% Production Testwith t = 1 sec,
Partial Discharge < 5 pC
Input to Output Test Voltage, Method aV1968Vpeak
V × 1.6 = V , Type and Sample Test, t =10 sec,
Partial Discharge < 5 pC
Highest Allowable Overvoltage (TransientOvervoltage, t = 60 sec) V8000Vpeak

电气特性 Electrical Characteristics(TA = 25°C)

参数符号最小Typ.[1]最大单位测试条件图号
ADD1DD2 IN
Resolution16BitsDecimation filter output set to 16 bits
Integral NonlinearityINL–15315LSBT = –40°C to +85°C; see Definitionssection
–25325LSBT = 85°C to 105°C
–2525V + = –250 mV to +250mV
Differential NonlinearityDNL–0.90.9LSBNo missing codes, guaranteed bydesign;
see Definitions section
Offset ErrorV–134.5mVT = –40°C to +105°C; see Definitionssection
Offset Drift vs.TCV3.5V/°C
Offset Drift vs. V120V/V
Gain ErrorG E–22%T = –40°C to +105°C, V + = –250 to A IN+250 mV;
see Definitions section
–11%T = 25°C, V + = –250 to +250 mV
Gain Error Drift vs.TCG60ppm/°C
Gain Error Drift vs. V110V/V
Full-Scale DifferentialFSR±320mVV = V + – V –; Note 2
Average Input BiasCurrent I–0.5AV = 5V, V = 5V, V + = 0 V; Note3 6
INADD1 DD2 IN
Average InputResistance R33kAcross V + or V – to GND1; Note 3
Input CapacitanceC8pFAcross V + or V – to GND1
DYNAMIC CHARACTERISTICSV + = –200 mV to +200 mV, 543 Hz,sine wave; Note 4
Signal-to-Noise RatioSNR7480dBT = –40°C to +105°C; see Definitionssection
Signal-to-SNDR6575dBT = –40°C to +105°C; see Definitionssection 7, 8
6875dBT = –40°C to +85°C7, 8
65T = –40°C to +105°C, V + = –250 mVto +250 mV 7
Effective Number ofBits ENOB12Bitssee Definitions section
Isolation TransientImmunity CMR25kV/VV = 1 kV; See Definitions section
Common-ModeRejection CMRR74dB
Input High VoltageV0.8 ×VNote 5
Input Low VoltageV0.2 ×VNote 5
Input CurrentI±0.5A
Input CapacitanceC6pF
Output High VoltageVVVVV = 5 V supply, I = –200 A
OHDD2DD2DD2 OUT
VVVV = 3.3 V supply, I = –200 A
DD2DD2DD2 OUT
Output Low VoltageV0.4VI = +200 A
V Supply CurrentI1419mA9, 10
V Supply CurrentI68mAV = 5 V supply11, 12
DD2DD2DD2
57mAV = 3.3 V supply DD2
1. All Typical valuesare at T = 25°C, V= 5 V, V= 5 V.
2. Beyond the full-scaleinput range thedataoutput is eitherallzeroes or allones.
4. Signal frequencyof 543 Hz is used asa referencefrequencyforcoherentsampling.
Unless otherwise noted,T = –40°C to +105°C,V =4.5 V to5.5 V, V= 3 V to5.5 V.
Modulator Clock InputFrequency f51020MHzClock duty cycle 40% to60%
Data Delay After RisingEdge of t315nsC = 15 pF5
Input-Output MomentaryV5000VrmsRH ≤ 50%, t = 1 min;1, 2

特性曲线(Typical Performance Curves)

应用领域 Applications

Internal reference voltageSO-16 packageMotor phase and rail current sensingOffset ErrorGain ErrorEffective Number of Bits (ENOB)Isolation Transient Immunity (CMR)Latch-up ConsiderationModulator Data OutputMODULATOR OUTPUTANALOG INPUT

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