品牌说明
本型号属 安森美（onsemi） 产品线。安森美 2016 年收购仙童半导体（Fairchild Semiconductor，业内简称 FSC）并沿用其品牌标识（ON / FSC），因此很多旧型号的资料与封装仍标着 Fairchild / FSC，实际供货主体为安森美。本页参数与规格书均取自该产品线原厂资料，订货与包装请以安森美现行料号为准。
产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
关键参数速览
- 正向电压 VF
- 2.7
- 正向电流 IF
- 2.7
产品特点 Features
- 600 V 60 A
- Maximum Junction Temperature: T = 175 C
- Positive Temperature Co−efficient for easy Parallel Operating C
- High Current Capability
- Low Saturation Voltage: V = 1.9 V (Typ.) @ I = 60 A
- CE(sat) C
- High Input Impedance
- Fast Switching: E = 7.5 uJ/A
- Tightened Parameter Distribution
- This Device is Pb−Free and is RoHS Compliant
- FGH60N60SMD
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 说明 | 额定值 | 单位 |
|---|---|---|---|
| V Collector to | Emitter Voltage | 600 | V |
| V Gate to Emitter | Voltage | ±20 | V |
| Transient Gate | to Emitter Voltage | ±30 | V |
| I Collector | Current T = 25°C | 120 | A |
| T C = 100°C | 60 | A | |
| I (Note 1) Pulsed Collector | Current | 180 | A |
| I F Diode Forward | Current T C = 25°C | 60 | A |
| T = 100°C | 30 | A | |
| I (Note 1) Pulsed Diode | Maximum Forward Current | 180 | A |
| P D Maximum | Power Dissipation T C = 25°C | 600 | W |
| T = 100°C | 300 | W | |
| T Operating | Junction Temperature | −55 to +175 | °C |
| T Storage | Temperature Range | −55 to +175 | °C |
| T Maximum Lead | Temp. for Soldering Purposes, 1/8” from Case for | 5 Seconds 300 | °C |
| RkΩJC (IGBT) Thermal | Resistance, Junction to Case | − 0.25 | kΩC/W |
| RkΩJC (Diode) Thermal | Resistance, Junction to Case | − 1.1 | kΩC/W |
| RkΩJA Thermal | Resistance, Junction to Ambient | − 40 | kΩC/W |
数据来源：原厂规格书
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| BV Collector | to Emitter Breakdown Voltage | V = 0 V, I = 250 µA | 600 | − | − | V |
| BV / T Temperature | Coefficient of Breakdown | Voltage V = 0 V, I = 250 µA | − | 0.6 | − | V/°C µA |
| I Collector | Cut−Off Current | V = V , V = 0 V | − | − | 250 | |
| I G−E | Leakage Current | V = V , V = 0 V | − | − | ±400 | nA |
| V G−E | Threshold Voltage | I = 250 µA, V = V | 3.5 | 4.5 | 6.0 | V |
| V CE(sat) Collector | to Emitter Saturation Voltage | I C = 60 A, V GE = 15 V, | − | 1.9 | 2.5 | V |
| T = 175°C | − | 2.1 | − | V | ||
| C ies Input | Capacitance | V CE = 30 V, V GE = 0 V, | − | 2915 | − | pF |
| C Output | Capacitance | − | 270 | − | pF | |
| V FM Diode | Forward Voltage | I F = 30 A T C = 25°C | − | 2.1 | 2.7 | V |
| T C = 175°C | − | 1.7 | − | |||
| T C = 175°C | − | 72 | − | |||
| T C = 175°C | − | 238 | − |
特性曲线（Typical Performance Curves）
应用领域 Applications
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