品牌说明
本型号属 安森美（onsemi） 产品线。安森美 2016 年收购仙童半导体（Fairchild Semiconductor，业内简称 FSC）并沿用其品牌标识（ON / FSC），因此很多旧型号的资料与封装仍标着 Fairchild / FSC，实际供货主体为安森美。本页参数与规格书均取自该产品线原厂资料，订货与包装请以安森美现行料号为准。
产品应用与封装尺寸
图纸取自原厂规格书，点击可放大查看原始尺寸标注。
引脚定义与内部结构
| 引脚 | 符号 | 名称 |
|---|---|---|
| 5 | EMITTER | |
| 6 | COLLECTOR | |
| 7 | BASE | |
| 8 | N/C |
数据来源：原厂规格书引脚图
关键参数速览
- 正向电压 VF
- 1.3
- 电流传输比 CTR
- 1000
- 正向电流 IF
- 60
- 集电极-发射极电压 VCEO
- 8-pin
- 工作温度 TA
- -40 to +100
产品特点 Features
- 8-pin
- High Current Transfer Ratio of 500% Minimum at The MOC223M consists of a gallium arsenide infrared
- I = 1 mA emitting diode optically coupled to a monolithic silicon
- Minimum BV of 30 V Guaranteed photodarlington detector, in a surface mountable, small
- CEO SOIC outline, plastic package. The MOCD223M is a dual-
- Convenient Plastic SOIC-8 Surface Mountable channel version of the MOC223M. They are ideally
- Package Style, with 0.050" Lead Spacing
- MOC223M,
绝对最大额定值 Absolute Maximum Ratings（TA = 25°C）
超过下表数值可能造成器件永久损坏，设计时请留余量。
| 符号 | 额定值 | 值 | 单位 |
|---|---|---|---|
| T Storage | Temperature | -40 to +125 | °C |
| T Ambient | Operating Temperature | -40 to +100 | °C |
| T Junction J | Temperature | -40 to +125 | °C 8-pin |
| T Lead Solder | Temperature | 260 for 10 seconds | °C |
| Total Device | Power Dissipation @ T = 25°C | 240 | mW |
| Derate Above | 25°C | 2.94 | mW/°C |
| I Continuous | Forward Current | 60 | mA |
| I (pk) Forward | Current – Peak (PW = 100 µs, 120 pps) | 1.0 | A |
| LED Power | Dissipation @ T = 25°C | 90 | mW |
| Derate Above | 25°C | 0.8 | mW/°C |
| I Continuous | Collector Current | 150 | mA |
| V Collector-Emitter | Voltage | 30 | V |
| V Collector-Base | Voltage, MOC223M | 70 | V |
| V Emitter-Collector | Voltage | 7 | V |
| Detector | Power Dissipation @ T = 25°C | 150 | mW |
| Derate Above | 25°C | 1.76 | mW/°C |
数据来源：原厂规格书
安全与绝缘额定值（DIN EN/IEC 60747−5−5）
| 符号 | 参数 | 值 | 单位 |
|---|---|---|---|
| MOC223M, | |||
| Installation Classifications | per DIN VDE < 150 V RMS | I–IV | |
| 0110/1.89 Table 1, For Rated | Mains Voltage < 300 V | I–III | |
| Pollution Degree (DIN VDE | 0110/1.89) | 2 | |
| Comparative Tracking Index | 175 | 8-pin | |
| Input-to-Output | Test Voltage, Method A, V x 1.6 = V | , | |
| IORM | PR 904 | V | |
| Type and | Sample Test with t = 10 s, Partial Discharge < | 5 pC | peak |
| PR Input-to-Output | Test Voltage, Method B, V x 1.875 = | V , | Darlington |
| IORM | PR 1060 | V | |
| 100% Production | Test with t = 1 s, Partial Discharge < 5 | pC | peak |
| V Highest Allowable | Over-Voltage | 4000 | V |
| External | Creepage | ≥ 4 | mm |
| External | Clearance | ≥ 4 | mm |
| T Case Temperature(1) | 150 | °C | |
| I Input Current(1) | 200 | mA | |
| P Output Power(1) | 300 | mW | |
| R Insulation | Resistance at T , V = 500 V(1) | > 109 | Ω MOC223M, |
电气特性 Electrical Characteristics（TA = 25°C）
| 符号 | 参数 | 测试条件 | 最小 | 典型 | 最大 | 单位 |
|---|---|---|---|---|---|---|
| MOCD223M | ||||||
| V Input | Forward Voltage | I = 1.0 mA | 1.08 | 1.3 | V | |
| C Input | Capacitance | 18 | pF | |||
| I | V = 5.0 V, T = 25°C | 1.0 | 50 | nA | ||
| Collector-Emitter Dark Current | 8-pin | |||||
| I | V = 5.0 V, T = 100°C | 1.0 | µA | |||
| BV | I = 100 µA | 30 | 100 | V | ||
| CEO Voltage | C | SOIC | ||||
| BV | I = 100 µA | 70 | 120 | V | ||
| BV | I = 100 µA | 7 | 10 | V | ||
| C | Collector-Emitter Capacitance | f = 1.0 MHz, V = 0 | 5.5 | pF | ||
| CTR Current | Transfer Ratio | I = 1.0 mA, V = 5.0 V | 500 | 1000 | % | |
| V | I = 500 µA, I = 1.0 mA | 1.0 | V | |||
| I = 5.0 mA, V = 10 V, R = | 100 Ω | Optocouplers | ||||
| t Turn-On | Time | F CC L | 10 | µs | ||
| I = 5.0 mA, V = 10 V, R = | 100 Ω | |||||
| t Turn-Off | Time | F CC L | 125 | ns | ||
| I = 5.0 mA, V = 10 V, R = | 100 Ω | |||||
| t Rise | Time | F CC L | 8 | µs | ||
| I = 5.0 mA, V = 10 V, R = | 100 Ω | |||||
| t Fall | Time | F CC L | 110 | µs |
特性曲线（Typical Performance Curves）
应用领域 Applications
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